Tox-Ic Technologies

SKKQ 1501/14E     
SEMIKRON MAKE
thyristor; opposing; 1.4kV; 1.5kA; 2; SEMISTART2; Ifsm: 17kA -

MODEL NO- 7MBP75TEA060-50
FUJI IGBT
IPM-R3 series 600V / 75A 6
Econo IPM series 600V / 50A 6

 

THYRISTOR MODULE                                                                                MODEL NUMBER - D1961SH45T       
MAKE - INFINEON

4500 V1830 A (TC=85 °C)0,5 mΩ

7,5 K/kW 36 ... 52 kN 121 mm

86 mm 26 mm                                                                 

A thyristor is a four-layer semiconductor device, consisting of alternating P-type and N-type materials (PNPN). A thyristor usually has three electrodes: an anode, a cathode and a gate, also known as a control electrode. The most common type of thyristor is the silicon-controlled rectifier (SCR).

Part Number: 25230120Net unit weight: 0.082 kg
Manufacturer: Semikron Danfoss


Manufacturer:SEMIKRONManufacturer Part No:SKIIP 36 NAB 126 V1Newark Part No.:16M0202

N • m g 1 2.0 6.5 — 95 8.0 1.8 — 400 120 700 150 250 — 3.5 0.083 0.15 — 0.034*3 0.06*3 5.2 mA µA nF nF nF nC ns ns ns ns µC V °C/W °C/W °C/W °C/W °C/W Ω — — 5.0 5.0 — — — 2700 — — — — — 28 — — — 0.02 — — — — — — — — — — — — — — — — — — — — — — — 0.52 6 V V 4.5 7.5 ns Collector cutoff current Gate leakage current Collector-emitter saturation voltage (Note 4) Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance Thermal resistance*4 External gate resistance ICES IGES Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q Rth(j-c’)R RG Symbol Parameter VGE(th) VCE(sat) *1 : TC measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. *4 : TC’ measured point is just under the chips. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. No short circuit capability is designed. G-E Short C-E Short Operation (Note 2) Pulse (Note 2) Operation (Note 2) Pulse (Note 2) TC = 25°C TC’ = 25°C*4 Main Terminal to base plate, AC 1 min. Main Terminal M6 Mounting holes M6 Typical value Symbol Parameter Collector current Emitter current Mounting torque Conditions Unit Ratings VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) PC’ (Note 3) Tj Tstg Viso — — — Unit Typ. Limits Min. Max. Test conditions M

Voltage650 VCurrent50 AColorBlackModel Name/Number6MBP50RTA060-01Usage/ApplicationAC Inverter DrivesBrandFujiPackaging TypeBox

Model NumberCM300DY-24HVoltage1200 VColorBlackConditionNewBrandMitsubishiCurrent300 ATypeIGBT ModuleMinimum Order Quantity1 PieceWE ARE LEADING SUPPLIER & TRADER OF IGBT MODULE
Description:Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
FeaturesLow Drive PowerLow VCE(sat)Discrete Super-Fast RecoveryFree-Wheel DiodeHigh Frequency OperationIsolated Base plate for EasyHeat Sinking
Applications:AC Motor Control Motion/Servo ControlUPSWelding Power Supplies

Model Number2MBI150ND-060-01BrandFujiVoltage600 VCurrent Rating150 AMPColorBLACKTemperature+ 85 CMinimum Order Quantity1 Piece

Current6 Amp-34 AmpRectifier TypeFull WaveUsage/Application3/4 Inverter 3/4 Inductive heating 3/4 ChopperMaterialPlasticFrequency50 HzVoltage55 V (Max)

Manufacturer: Infineon Product Category: IGBT Modules RoHS: Details Product: IGBT Silicon Modules Configuration: Dual Collector- Emitter Voltage VCEO Max: 1.2 kV Collector-Emitter Saturation Voltage: 1.75 V Continuous Collector Current at 25 C: 1.4 kA Gate-Emitter Leakage Current: 400 nA Pd - Power Dissipation: 7.65 kW Package/Case: PRIME3 Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 150 C Packaging: Tray Brand: Infineon Technologies Height: 38 mm Length: 250 mm Maximum Gate Emitter Voltage: 20 V Mounting Style: Screw Mount Product Type: IGBT Modules Series: Trench/Fieldstop IGBT4 - P4 2 Subcategory: IGBTs Technology: Si Tradename: PrimePACK Width: 89 mm Part # Aliases: FF1400R12IP4BOSA1 SP000609758 FF1400R

Repetitive Peak Reverse Voltage600VBrandEUPECPart NumberT1329N22TOFRated Average On-State Current700 AMPMaximum Operating Temperature85Mounting TypeSOLDER TYPEPackage TypeCAPSULERepetitive Peak Forward Blocking Voltage699Surge Current Rating699 ampContact PlatingTIN

Product specifications

Product Specification

SKKQ 1201/14E
MAKE - SEMIKRON THYRISTOR MODULE 
SEMiSTART 2 — Thyristor/Diode Modules. 

Operating Voltage 3.3VPart Number S3pdb80n16Brand SerictifierModel Name/Number S3pdb80n16Mounting Type SMDCurrent 200 VFrequency 80a-1600vPackage Type Box

MG150Q2YS50
Mitsubishi IGBT
Silicon N Channel IGBT         
 

CM300DU-12F 
Mitsubishi IGBT
IGBT Module Trench Half Bridge 600 V 300 A 830 W  

R355CH12

Westcode Gate Thyristor capsule
 

R355CH12  
WESTCODE MAKE
Thyristor Module
Trigger Devices Manufacturer: Zilog Description: Silicon Controlled Rectifier, 2600A I(T)RMS, 1200V V(DRM), 1200V V(RRM), ... 

MDT760/18E
semikron thyristor
696 Amp and voltage from 1600 V to 1800 V         

5STB24Q2800                                                                           
Thyristor
SCR - Phase Control Thyristor. 
swiss made

THYRISTOR MODULE                                                                                MODEL NUMBER : D1331SH45T         
 Fast Recovery Rectifiers ; Configuration: Single ; Vf - Forward Voltage: 4.2 V ; Max Surge Current: 28 kA.
Make - Infineon  

Symbol Test Conditions Maximum Ratings I TRMS, IFRMS TVJ = TVJM 520 A I TAVM, IFAVM TC = 85
C; 180
sine 320 A I TSM, IFSM TVJ = 45
C; t = 10 ms (50 Hz) 9200 A VR = 0 t = 8.3 ms (60 Hz) 10100 A TVJ = TVJM t = 10 ms (50 Hz) 8000 A VR = 0 t = 8.3 ms (60 Hz) 8800 A
i 2 dt TVJ = 45
C t = 10 ms (50 Hz) 423 000 A2 s VR = 0 t = 8.3 ms (60 Hz) 423 000 A2 s TVJ = TVJM t = 10 ms (50 Hz) 320 000 A2 s VR = 0 t = 8.3 ms (60 Hz) 321 000 A2 s (di/dt)cr TVJ = TVJM repetitive, IT = 960 A 100 A/s f =50 Hz, tP =200 s VD = 2/3 VDRM I G = 1 A, non repetitive, IT = ITAVM 500 A/s diG/dt = 1 A/s (dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM 1000 V/s RGK = ; method 1 (linear voltage rise) PGM TVJ = TVJM t P = 30 s 120 W I T = ITAVM t P = 500 s 60 W PGAV 20 W VRGM 10 V TVJ -40...+140
C TVJM 140
C Tstg -40...+1

Symbol Definition Ratings typ. max. I V I A VT 1.14 R 0.155 K/W min. 165 V V T = 25°C VJ 400 V = V T = °C VJ 40 mA T = 25°C VJ I = A T V T = °C C 85 Ptot T = 25°C C 645 W 150 2200 forward voltage drop total power dissipation Conditions Unit 1.36 T = 25°C VJ 125 VT0 T = °C VJ 125 0.80 V rT 1.6 mΩ I = A T T = °C VJ 1.08 V V 150 1.36 I = A 300 I = A 300 threshold voltage slope resistance for power loss calculation only µA 125 V T = 25°C VJ 2200 V I 300 A PGM max. gate power dissipation t = 30 µs P T = °C C 125 120 W t =P 60 W PGAV average gate power dissipation 8 W CJ junction capacitance V = V700 T = 25°C R f = 1 MHz VJ 195 pF ITSM max. forward surge current t = 10 ms; (50 Hz), sine T = 45°C VJ T = °C VJ 125 I²t value for fusing T = 45°C T = °C 125 V = 0 V R V = 0 V R V = 0 V V = 0 V t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine VJ R VJ R thJC thermal resistance junction to case T = °C VJ 125 6.00 6.48 130.1 126.3 kA kA kA kA 5.10 5.51 180.0 174.7 2200 500 µs RMS f

Elektrische Eigenschaften / Electrical properties Elektrische Eigenschaften Höchstzulässige Werte / Maximum rated valuesTT162N TD162NTT162N...-K TD162N...-ATT162N...-A TD162N…_TIMPeriodische Vorwärts- und Rückwärts-Spitzensperrspannungrepetitive peak forward off-state and reverse voltagesTvj = -40°C... Tvj max VDRM,VRRM 1200 14001600VVVorwärts-Stoßspitzensperrspannungnon-repetitive peak forward off-state voltageTvj = -40°C... Tvj max VDSM 1200 14001600VVRückwärts-Stoßspitzensperrspannungnon-repetitive peak reverse voltageTvj = +25°C... Tvj max VRSM 1300 15001700VVDurchlaßstrom-Grenzeffektivwertmaximum RMS on-state currentITRMSM 260 ADauergrenzstromaverage on-state currentTC = 85°C ITAVM 162 AStoßstrom-Grenzwertsurge currentTvj = 25 °C, tP = 10 msTvj = Tvj max, tP = 10 msITSM 52004400AAGrenzlastintegralI²t-valueTvj = 25 °C, tP = 10 msTvj = Tvj max, tP = 10 msI²t 13500097000A²sA²sKritische Stromsteilheitcritical rate of rise of on-state currentDIN IEC 747-6 f = 50 Hz,iGM = 0,6 A, diG/dt = 0,6 A/µs(diT/dt)cr 150 A/µsKritische Spannungssteilheitcritical rate of rise of off-state voltageTvj = Tvj max, vD = 0,67 VDRM6.Kennbuchstabe / 6th letter C6.Kennbuchstabe / 6th letter F(dvD/dt)cr5001000V/µs

Thyristor Module                                                                                      MODEL NUMBER - N3533ZD220