Tox-Ic Technologies

Model Name/Number2MBI300U4H-120BrandFujiVoltage1200VCurrent Rating300AWidth62mmMaximum Operating Temperature+150 DegreeCLength108mmHeight30mmPart No9008Other Details:GBT Discretes & Modules, Fuji Electric The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C VCES 1200 V Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 100°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C IC nom IC 300 460 A A PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms ICRM 600 A Gesamt-Verlustleistung Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot 1650 W Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage VGES +/-20 V CharakteristischeWerte/CharacteristicValues min. typ. max. Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage IC = 300 A, VGE = 15 V IC = 300 A, VGE = 15 V IC = 300 A, VGE = 15 V VCE sat 1,75 2,00 2,05 2,10 V V V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gatethresholdvoltage IC = 11,5 mA, VCE = VGE, Tvj = 25°C VGEth 5,2 5,8 6,4 V Gateladung Gatecharge VGE = -15 V ... +15 V QG 2,25 µC InternerGatewiderstand Internalgateresistor Tvj = 25°C RGint 2,5 Ω Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 18,5 nF Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 1,05 nF Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES 3,0 mA Gate-Emitter-Reststrom Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA Einschaltverzögerungszeit,induktiveLast Turn-ondelaytime,inductiveload IC = 300 A, VCE = 600 V VGE = ±15 V RGon = 0,75 Ω td on 0,19 0,21 0,22 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C Anstiegszeit,induktiveLast Risetime,inductiveload IC = 300 A, VCE = 600 V VGE = ±15 V RGon = 0,75 Ω tr 0,05 0,06 0,06 µs µs

CharacteristicValueChip TechnologyIGBT 4 (Trench)Dimensions (LLxBBxHH) mm123x107x35HousingSKiM 4Part Number23918950Product LineSKiM 4/5Product StatusIn productionProduct TypeSKiM401TMLI12E4BSwitches3-LevelTechnologyIGBT

New: A brand-new, unused, unopened, undamaged item in its original packaging (where packaging is applicable). Packaging should be the same as what is found in a retail store, unless the item was packaged by the manufacturer in non-retail packaging, such as an unprinted box or plastic bag. See the seller's listing for full detail

Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tj = 150°C Tc = 25°C 642 A Tc = 80°C 449 A ICRM ICRM = 2xICnom 900 A VGES -20 ... 20 V tpsc VCC = 600V VGE ≤ 20V Tj = 125°C VCES ≤ 1200V 10 µs Tj -40 ... 150 °C Inverse diode IF Tj = 150°C Tc = 25°C 561 A Tc = 80°C 384 A IFRM IFRM = 2xIFnom 900 A IFSM tp = 10ms, half sine wave, Tj = 25°C 2900 A Tj -40 ... 150 °C Module It(RMS) 600 A Tstg -40 ... 125 °C Visol AC sinus 50Hz, t = 60s 4000 V

BrandSemikronPart

NumberSKKT162/16EMaximum Operating Temperature130 Degree CMounting TypeScrewRepetitive Peak Forward Blocking Voltage1600VMax. Off State Voltage1.6 KVLoad Current156AMinimum Order Quantity5Thyristor Module rating 162A 1600V product from SEMIKRON with the model number SKKT 162/16E.
Manufacturer SEMIKRON Type of module Thyristor Semiconductor structure Double Series



Version A21 Case SEMIPACK2 Max. forward voltage 1.6V Max. forward impulse current 5.4kA Gate current 150mA Mounting screw Electrical mounting screw